Photovoltaic infrared radiation detector from IV-VI polycrystalline semiconductors

The invention relates to a process for obtaining a detector as well as an infrared radiation detector itself which finds application in spectroscopy, food and gas analysis as well as for projectile guidance. Unlike previous detectors, the invention has superior performance in terms of speed, sensitivity, specific detectivity and low operating voltage. Detector consisting of a substrate of silicon, glass, ceramic, composite, metal or alloy, the first contact electrode of gold, which also serves as a mirror of incoming infrared radiation, a semiconductor layer of type P lead sulfide, lead selenide or lead telluride associated with N -layer of that semiconductor for forming P – N homojunction and other contact of partially transparent electrode.